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Tuesday, May 1, 2012
ANDROID (operating system)
Android (operating system)
Android
Home screen displayed by Samsung Nexus S with Google, running Android 2.3 "Gingerbread"
Company / developer
Google Inc, Open Handset Alliance
Programmed in XML, C (core),[1] Java (UI), C++
Working state Current
Source model Mixed (free and open source software and proprietary software)[2][3]
Initial release 21 October 2008
Latest stable release
Tablets: 3.2 (Honeycomb)[4]
Phones: 2.3.5 (Gingerbread) / 25 July 2011; 31 days ago[4]
Package manager APK
Supported platforms ARM, MIPS,[5] x86[6][citation needed]
Kernel type
Linux kernel (monolithic)
Default user interface
Graphical
License
Apache License 2.0 before 3.0, closed source for 3.0, 3.1 and 3.2: Linux kernel patches under GNU GPL v2[7]
Official website http://www.android.com/
History
Foundation
Android, Inc. was founded in Palo Alto, California, United States in October, 2003 by Andy Rubin (co-founder of Danger),Rich Miner (co-founder of Wildfire Communications, Inc.),Nick Sears (once VP at T-Mobile),and Chris White (headed design and interface development at WebTV)to develop, in Rubin's words "...smarter mobile devices that are more aware of its owner's location and preferences".[27] Despite the obvious past accomplishments of the founders and early employees, Android Inc. operated secretively, revealing only that it was working on software for mobile phones.[27]
That same year, Rubin ran out of cash. Steve Perlman brought him $10,000 in cash in an envelope and refused a stake in the company.[28]
Acquisition by Google
Google acquired Android Inc. in August 2005, making Android Inc. a wholly owned subsidiary of Google Inc. Key employees of Android Inc., including Andy Rubin, Rich Miner and Chris White, stayed at the company after the acquisition.[24]
Not much was known about Android Inc. at the time of the acquisition, but many assumed that Google was planning to enter the mobile phone market with this move.[citation needed]
Post-acquisition development
At Google, the team led by Rubin developed a mobile device platform powered by the Linux kernel. Google marketed the platform to handset makers and carriers on the premise of providing a flexible, upgradable system. Google had lined up a series of hardware component and software partners and signaled to carriers that it was open to various degrees of cooperation on their part.[29][30][31]
Speculation about Google's intention to enter the mobile communications market continued to build through December 2006.[32] Reports from the BBC and The Wall Street Journal noted that Google wanted its search and applications on mobile phones and it was working hard to deliver that. Print and online media outlets soon reported rumors that Google was developing a Google-branded handset.[33] Some speculated that as Google was defining technical specifications, it was showing prototypes to cell phone manufacturers and network operators.
In September 2007, InformationWeek covered an Evalueserve study reporting that Google had filed several patent applications in the area of mobile telephony.[34][35]
[edit] Open Handset Alliance
Main article: Open Handset Alliance
Today's announcement is more ambitious than any single 'Google Phone' that the press has been speculating about over the past few weeks. Our vision is that the powerful platform we're unveiling will power thousands of different phone models.
Eric Schmidt, former Google Chairman/CEO[13]
On November 5, 2007, the Open Handset Alliance, a consortium of several companies which include Broadcom Corporation, Google, HTC, Intel, LG, Marvell Technology Group, Motorola, Nvidia, Qualcomm, Samsung Electronics, Sprint Nextel, T-Mobile and Texas Instruments unveiled itself. The goal of the Open Handset Alliance is to develop open standards for mobile devices.[13] On the same day, the Open Handset Alliance also unveiled their first product, Android, a mobile device platform built on the Linux kernel version 2.6.[13]
On December 9, 2008, 14 new members joined, including ARM Holdings, Atheros Communications, Asustek Computer Inc, Garmin Ltd, Huawei Technologies, PacketVideo, Softbank, Sony Ericsson, Toshiba Corp, and Vodafone Group Plc.[36][37]
[edit] Licensing
With the exception of brief update periods, Android has been available under a free and open source software license since October 21, 2008. Google published the entire source code (including network and telephony stacks)[38] under an Apache License.[39] Google also keeps the reviewed issues list publicly open for anyone to see and comment.[40]
Even though the software is open-source, device manufacturers cannot use Google's Android trademark unless Google certifies that the device complies with their Compatibility Definition Document (CDD). Devices must also meet this definition to be eligible to license Google's closed-source applications, including the Android Market.[41]
In September 2010, Skyhook Wireless filed a lawsuit against Google in which they alleged that Google had used the compatibility document to block Skyhook's mobile positioning service (XPS) from Motorola's Android mobile devices.[42] In December 2010 a judge denied Skyhook's motion for preliminary injunction, saying that Google had not closed off the possibility of accepting a revised version of Skyhook's XPS service, and that Motorola had terminated their contract with Skyhook because Skyhook wanted to disable Google's location data collection functions on Motorola's devices, which would have violated Motorola's obligations to Google and its carriers.[43]
In early 2011, Google chose to temporarily withhold the source code to the tablet-only Honeycomb release, which called into question the "open-ness" of this Android release.[44] The reason, according to Andy Rubin in an official Android blog post, was because Honeycomb was rushed for production of the Motorola Xoom,[45] and they did not want third parties creating a "really bad user experience" by attempting to put onto smartphones a version of Android intended for tablets.[46] Google later confirmed that the Honeycomb source code would not be released until after it was merged with the Gingerbread release in Ice Cream Sandwich.[47]
Version history
Main article: Android version history
Android has seen a number of updates since its original release. These updates to the base operating system typically fix bugs and add new features. Generally, each new version of the Android operating system is developed under a code name based on a dessert item. Past updates included Cupcake and Donut. The code names are in alphabetical order (Cupcake, Donut, Eclair, Froyo, Gingerbread, Honeycomb, and the upcoming Ice Cream Sandwich). Below is a list of the most recent versions, and what they include:
• 2.0 (Eclair) included a new web browser, with a new user interface and support for HTML5 and the W3C Geolocation API. It also included an enhanced camera app with features like digital zoom, flash, color effects, and more.[48]
• 2.1 (Eclair) included support for voice controls throughout the entire OS. It also included a new launcher, with 5 homescreens instead of 3, animated backgrounds, and a button to open the menu (instead of a slider). It also included a new weather app, and improved functionality in the Email and Phonebook apps.[49]
• 2.2 (Froyo) introduced speed improvements with JIT optimization and the Chrome V8 JavaScript engine, and added Wi-Fi hotspot tethering and Adobe Flash support[50]
• 2.3 (Gingerbread) refined the user interface, improved the soft keyboard and copy/paste features, and added support for Near Field Communication[51]
• 3.0 (Honeycomb) was a tablet-oriented[52][53][54] release which supports larger screen devices and introduces many new user interface features, and supports multicore processors and hardware acceleration for graphics.[55] The Honeycomb SDK has been released and the first device featuring this version, the Motorola Xoom tablet, went on sale in February 2011.[56]
• 3.1 (Honeycomb) was announced at the 2011 Google I/O on 10 May 2011. - To allow honeycomb devices to directly transfer content from USB devices[57]
• 3.2 (Honeycomb) is "an incremental release that adds several new capabilities for users and developers". Highlights include optimization for a broader range of screen sizes; new "zoom-to-fill" screen compatibility mode; capability to load media files directly from the SD card; and an extended screen support API, providing developers with more precise control over the UI.[58]
Future releases that have been announced include:
• 4.0 (Ice Cream Sandwich)[59] is said to be a combination of Gingerbread and Honeycomb into a "cohesive whole".[60] It will be released in Q4 2011.[61]
Design
Android's kernel is derived from the Linux kernel. Google contributed code to the Linux kernel as part of their Android effort, but certain features, notably a power management feature called wakelocks, were rejected by mainline kernel developers, so the Android kernel is now a separate version or fork of the Linux kernel.[62][63][64]
Google announced in April 2010 that they would hire two employees to work with the Linux kernel community.[65] Greg Kroah-Hartman, the current Linux kernel maintainer for the -stable branch, said in December 2010 that he was concerned that Google was no longer trying to get their code changes included in mainstream Linux.[63] Some Google Android developers hinted that "the Android team was getting fed up with the process", because they were a small team and had more urgent work to do on Android.[66]
Android does not have a native X Window System nor does it support the full set of standard GNU libraries, and this makes it difficult to port existing GNU/Linux applications or libraries to Android.[67] However, support for the X Window System is possible.[68]
Features
The Android Emulator default home screen (v1.5)
Architecture diagram
Current features and specifications:[69][70][71]
Handset layouts
The platform is adaptable to larger, VGA, 2D graphics library, 3D graphics library based on OpenGL ES 2.0 specifications, and traditional smartphone layouts.
Storage
SQLite, a lightweight relational database, is used for data storage purposes.
Connectivity
Android supports connectivity technologies including GSM/EDGE, IDEN, CDMA, EV-DO, UMTS, Bluetooth, Wi-Fi, LTE, NFC and WiMAX.
Messaging
SMS and MMS are available forms of messaging, including threaded text messaging and now Android Cloud To Device Messaging Framework(C2DM) is also a part of Android Push Messaging service.
Multiple language support
Android supports multiple human languages. The number of languages more than doubled for the platform 2.3 Gingerbread. Android lacks font rendering of several languages even after official announcements[citation needed] of added support (e.g. Hindi).
Web browser
The web browser available in Android is based on the open-source WebKit layout engine, coupled with Chrome's V8 JavaScript engine. The browser scores a 93/100 on the Acid3 Test.
Java support
While most Android applications are written in Java, there is no Java Virtual Machine in the platform and Java byte code is not executed. Java classes are compiled into Dalvik executables and run on Dalvik, a specialized virtual machine designed specifically for Android and optimized for battery-powered mobile devices with limited memory and CPU. J2ME support can be provided via third-party applications.
Media support
Android supports the following audio/video/still media formats: WebM, H.263, H.264 (in 3GP or MP4 container), MPEG-4 SP, AMR, AMR-WB (in 3GP container), AAC, HE-AAC (in MP4 or 3GP container), MP3, MIDI, Ogg Vorbis, FLAC, WAV, JPEG, PNG, GIF, BMP.[71]
Streaming media support
RTP/RTSP streaming (3GPP PSS, ISMA), HTML progressive download (HTML5
Friday, April 22, 2011
diode
A diode is an electrical device allowing current to move through it in one direction with far greater ease than in the other.In electronics, a diode is a two-terminal electronic component that conducts electric current in only one direction. The term usually refers to a semiconductor diode, the most common type today. This is a crystalline piece of semiconductor material connected to two electrical terminals. A vacuum tube diode (now little used except in some high-power technologies) is a vacuum tube with two electrodes: a plate and a cathode.
The most common function of a diode is to allow an electric current to pass in one direction (called the diode's forward direction), while blocking current in the opposite direction (the reverse direction). Thus, the diode can be thought of as an electronic version of a check valve. This unidirectional behavior is called rectification, and is used to convert alternating current to direct current, and to extract modulation from radio signals in radio receivers.
However, diodes can have more complicated behavior than this simple on-off action. This is due to their complex non-linear electrical characteristics, which can be tailored by varying the construction of their P-N junction. These are exploited in special purpose diodes that perform many different functions. For example, specialized diodes are used to regulate voltage (Zener diodes), to electronically tune radio and TV receivers (varactor diodes), to generate radio frequency oscillations (tunnel diodes), and to produce light (light emitting diodes). Tunnel diodes exhibit negative resistance, which makes them useful in some types of circuits.
CURRENT VOLTAGE CHARACTERISTICS
A semiconductor diode’s behavior in a circuit is given by its current–voltage characteristic, or I–V graph (see graph above). The shape of the curve is determined by the transport of charge carriers through the so-called depletion layer or depletion region that exists at the p-n junction between differing semiconductors. When a p-n junction is first created, conduction band (mobile) electrons from the N-doped region diffuse into the P-doped region where there is a large population of holes (vacant places for electrons) with which the electrons “recombine”. When a mobile electron recombines with a hole, both hole and electron vanish, leaving behind an immobile positively charged donor (dopant) on the N-side and negatively charged acceptor (dopant) on the P-side. The region around the p-n junction becomes depleted of charge carriers and thus behaves as an insulator.
However, the width of the depletion region (called the depletion width) cannot grow without limit. For each electron-hole pair that recombines, a positively charged dopant ion is left behind in the N-doped region, and a negatively charged dopant ion is left behind in the P-doped region. As recombination proceeds more ions are created, an increasing electric field develops through the depletion zone which acts to slow and then finally stop recombination. At this point, there is a “built-in” potential across the depletion zone.
If an external voltage is placed across the diode with the same polarity as the built-in potential, the depletion zone continues to act as an insulator, preventing any significant electric current flow (unless electron/hole pairs are actively being created in the junction by, for instance, light. see photodiode). This is the reverse bias phenomenon. However, if the polarity of the external voltage opposes the built-in potential, recombination can once again proceed, resulting in substantial electric current through the p-n junction (i.e. substantial numbers of electrons and holes recombine at the junction).
At very large reverse bias , beyond the peak inverse voltage or PIV, a process called reverse breakdown occurs which causes a large increase in current (i.e. a large number of electrons and holes are created at, and move away from the pn junction) that usually damages the device permanently. The avalanche diode is deliberately designed for use in the avalanche region. In the zener diode, the concept of PIV is not applicable. A zener diode contains a heavily doped p-n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is “clamped” to a known value (called the zener voltage), and avalanche does not occur. Both devices, however, do have a limit to the maximum current and power in the clamped reverse voltage region. Also, following the end of forward conduction in any diode, there is reverse current for a short time. The device does not attain its full blocking capability until the reverse current ceases.
The second region, at reverse biases more positive than the PIV, has only a very small reverse saturation current. In the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the µA range). However, this is temperature dependent, and at sufficiently high temperatures, a substantial amount of reverse current can be observed (mA or more).
The third region is forward but small bias, where only a small forward current is conducted.
As the potential difference is increased above an arbitrarily defined “cut-in voltage” or “on-voltage” or “diode forward voltage drop (Vd)”, the diode current becomes appreciable (the level of current considered “appreciable” and the value of cut-in voltage depends on the application), and the diode presents a very low resistance. The current–voltage curve is exponential.
REVERSE-RECOVERY EFFECT
Following the end of forward conduction in a PN type diode, a reverse current flows for a short time. The device does not attain its full blocking capability until the reverse current ceases.
The effect can be significant when switching large currents very quickly (di/dt on the order of 100 A/µs or more). A certain amount of "reverse recovery time" tr (on the order of tens of nanoseconds) may be required to remove the "reverse recovery charge" Qr (on the order of tens of nanocoulombs) from the diode. During this recovery time, the diode can actually conduct in the reverse direction. In certain real-world cases it can be important to consider the losses incurred by this non-ideal diode effect. However, when the slew rate of the current is not so severe (di/dt on the order of 10 A/µs or less), the effect can be safely ignored.[12] For most applications, the effect is also negligible for Schottky diodes.
The reverse current ceases abruptly when the stored charge is depleted, which is exploited in step recovery diodes for generation of extremely short pulses.
APPLICATIOS
-Radio demodulation
The first use for the diode was the demodulation of amplitude modulated (AM) radio broadcasts. The history of this discovery is treated in depth in the radio article. In summary, an AM signal consists of alternating positive and negative peaks of voltage, whose amplitude or “envelope” is proportional to the original audio signal. The diode (originally a crystal diode) rectifies the AM radio frequency signal, leaving an audio signal which is the original audio signal, minus atmospheric noise. The audio is extracted using a simple filter and fed into an audio amplifier or transducer, which generates sound waves.
-Power conversion
Rectifiers are constructed from diodes, where they are used to convert alternating current (AC) electricity into direct current (DC). Automotive alternators are a common example, where the diode, which rectifies the AC into DC, provides better performance than the commutator of earlier dynamo. Similarly, diodes are also used in Cockcroft–Walton voltage multipliers to convert AC into higher DC voltages.
-Over-voltage protection
Diodes are frequently used to conduct damaging high voltages away from sensitive electronic devices. They are usually reverse-biased (non-conducting) under normal circumstances. When the voltage rises above the normal range, the diodes become forward-biased (conducting). For example, diodes are used in (stepper motor and H-bridge) motor controller and relay circuits to de-energize coils rapidly without the damaging voltage spikes that would otherwise occur. (Any diode used in such an application is called a flyback diode). Many integrated circuits also incorporate diodes on the connection pins to prevent external voltages from damaging their sensitive transistors. Specialized diodes are used to protect from over-voltages at higher power (see Diode types above).
-Logic gates
Diodes can be combined with other components to construct AND and OR logic gates. This is referred to as diode logic.
-Ionizing radiation detectors
In addition to light, mentioned above, semiconductor diodes are sensitive to more energetic radiation. In electronics, cosmic rays and other sources of ionizing radiation cause noise pulses and single and multiple bit errors. This effect is sometimes exploited by particle detectors to detect radiation. A single particle of radiation, with thousands or millions of electron volts of energy, generates many charge carrier pairs, as its energy is deposited in the semiconductor material. If the depletion layer is large enough to catch the whole shower or to stop a heavy particle, a fairly accurate measurement of the particle’s energy can be made, simply by measuring the charge conducted and without the complexity of a magnetic spectrometer or etc. These semiconductor radiation detectors need efficient and uniform charge collection and low leakage current. They are often cooled by liquid nitrogen. For longer range (about a centimetre) particles they need a very large depletion depth and large area. For short range particles, they need any contact or un-depleted semiconductor on at least one surface to be very thin. The back-bias voltages are near breakdown (around a thousand volts per centimetre). Germanium and silicon are common materials. Some of these detectors sense position as well as energy. They have a finite life, especially when detecting heavy particles, because of radiation damage. Silicon and germanium are quite different in their ability to convert gamma rays to electron showers.
Semiconductor detectors for high energy particles are used in large numbers. Because of energy loss fluctuations, accurate measurement of the energy deposited is of less use
-Temperature measurements
A diode can be used as a temperature measuring device, since the forward voltage drop across the diode depends on temperature, as in a Silicon bandgap temperature sensor. From the Shockley ideal diode equation given above, it appears the voltage has a positive temperature coefficient (at a constant current) but depends on doping concentration and operating temperature (Sze 2007). The temperature coefficient can be negative as in typical thermistors or positive for temperature sense diodes down to about 20 kelvins. Typically, silicon diodes have approximately −2 mV/˚C temperature coefficient at room temperature.
-Current steering
Diodes will prevent currents in unintended directions. To supply power to an electrical circuit during a power failure, the circuit can draw current from a battery. An Uninterruptible power supply may use diodes in this way to ensure that current is only drawn from the battery when necessary. Similarly, small boats typically have two circuits each with their own battery/batteries: one used for engine starting; one used for domestics. Normally both are charged from a single alternator, and a heavy duty split charge diode is used to prevent the higher charge battery (typically the engine battery) from discharging through the lower charged battery when the alternator is not running.
Diodes are also used in electronic musical keyboards. To reduce the amount of wiring needed in electronic musical keyboards, these instruments often use keyboard matrix circuits. The keyboard controller scans the rows and columns to determine which note the player has pressed. The problem with matrix circuits is that when several notes are pressed at once, the current can flow backwards through the circuit and trigger "phantom keys" that cause “ghost” notes to play. To avoid triggering unwanted notes, most keyboard matrix circuits have diodes soldered with the switch under each key of the musical keyboard. The same principle is also used for the switch matrix in solid state pinball machines
The most common function of a diode is to allow an electric current to pass in one direction (called the diode's forward direction), while blocking current in the opposite direction (the reverse direction). Thus, the diode can be thought of as an electronic version of a check valve. This unidirectional behavior is called rectification, and is used to convert alternating current to direct current, and to extract modulation from radio signals in radio receivers.
However, diodes can have more complicated behavior than this simple on-off action. This is due to their complex non-linear electrical characteristics, which can be tailored by varying the construction of their P-N junction. These are exploited in special purpose diodes that perform many different functions. For example, specialized diodes are used to regulate voltage (Zener diodes), to electronically tune radio and TV receivers (varactor diodes), to generate radio frequency oscillations (tunnel diodes), and to produce light (light emitting diodes). Tunnel diodes exhibit negative resistance, which makes them useful in some types of circuits.
CURRENT VOLTAGE CHARACTERISTICS
A semiconductor diode’s behavior in a circuit is given by its current–voltage characteristic, or I–V graph (see graph above). The shape of the curve is determined by the transport of charge carriers through the so-called depletion layer or depletion region that exists at the p-n junction between differing semiconductors. When a p-n junction is first created, conduction band (mobile) electrons from the N-doped region diffuse into the P-doped region where there is a large population of holes (vacant places for electrons) with which the electrons “recombine”. When a mobile electron recombines with a hole, both hole and electron vanish, leaving behind an immobile positively charged donor (dopant) on the N-side and negatively charged acceptor (dopant) on the P-side. The region around the p-n junction becomes depleted of charge carriers and thus behaves as an insulator.
However, the width of the depletion region (called the depletion width) cannot grow without limit. For each electron-hole pair that recombines, a positively charged dopant ion is left behind in the N-doped region, and a negatively charged dopant ion is left behind in the P-doped region. As recombination proceeds more ions are created, an increasing electric field develops through the depletion zone which acts to slow and then finally stop recombination. At this point, there is a “built-in” potential across the depletion zone.
If an external voltage is placed across the diode with the same polarity as the built-in potential, the depletion zone continues to act as an insulator, preventing any significant electric current flow (unless electron/hole pairs are actively being created in the junction by, for instance, light. see photodiode). This is the reverse bias phenomenon. However, if the polarity of the external voltage opposes the built-in potential, recombination can once again proceed, resulting in substantial electric current through the p-n junction (i.e. substantial numbers of electrons and holes recombine at the junction).
At very large reverse bias , beyond the peak inverse voltage or PIV, a process called reverse breakdown occurs which causes a large increase in current (i.e. a large number of electrons and holes are created at, and move away from the pn junction) that usually damages the device permanently. The avalanche diode is deliberately designed for use in the avalanche region. In the zener diode, the concept of PIV is not applicable. A zener diode contains a heavily doped p-n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is “clamped” to a known value (called the zener voltage), and avalanche does not occur. Both devices, however, do have a limit to the maximum current and power in the clamped reverse voltage region. Also, following the end of forward conduction in any diode, there is reverse current for a short time. The device does not attain its full blocking capability until the reverse current ceases.
The second region, at reverse biases more positive than the PIV, has only a very small reverse saturation current. In the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the µA range). However, this is temperature dependent, and at sufficiently high temperatures, a substantial amount of reverse current can be observed (mA or more).
The third region is forward but small bias, where only a small forward current is conducted.
As the potential difference is increased above an arbitrarily defined “cut-in voltage” or “on-voltage” or “diode forward voltage drop (Vd)”, the diode current becomes appreciable (the level of current considered “appreciable” and the value of cut-in voltage depends on the application), and the diode presents a very low resistance. The current–voltage curve is exponential.
REVERSE-RECOVERY EFFECT
Following the end of forward conduction in a PN type diode, a reverse current flows for a short time. The device does not attain its full blocking capability until the reverse current ceases.
The effect can be significant when switching large currents very quickly (di/dt on the order of 100 A/µs or more). A certain amount of "reverse recovery time" tr (on the order of tens of nanoseconds) may be required to remove the "reverse recovery charge" Qr (on the order of tens of nanocoulombs) from the diode. During this recovery time, the diode can actually conduct in the reverse direction. In certain real-world cases it can be important to consider the losses incurred by this non-ideal diode effect. However, when the slew rate of the current is not so severe (di/dt on the order of 10 A/µs or less), the effect can be safely ignored.[12] For most applications, the effect is also negligible for Schottky diodes.
The reverse current ceases abruptly when the stored charge is depleted, which is exploited in step recovery diodes for generation of extremely short pulses.
APPLICATIOS
-Radio demodulation
The first use for the diode was the demodulation of amplitude modulated (AM) radio broadcasts. The history of this discovery is treated in depth in the radio article. In summary, an AM signal consists of alternating positive and negative peaks of voltage, whose amplitude or “envelope” is proportional to the original audio signal. The diode (originally a crystal diode) rectifies the AM radio frequency signal, leaving an audio signal which is the original audio signal, minus atmospheric noise. The audio is extracted using a simple filter and fed into an audio amplifier or transducer, which generates sound waves.
-Power conversion
Rectifiers are constructed from diodes, where they are used to convert alternating current (AC) electricity into direct current (DC). Automotive alternators are a common example, where the diode, which rectifies the AC into DC, provides better performance than the commutator of earlier dynamo. Similarly, diodes are also used in Cockcroft–Walton voltage multipliers to convert AC into higher DC voltages.
-Over-voltage protection
Diodes are frequently used to conduct damaging high voltages away from sensitive electronic devices. They are usually reverse-biased (non-conducting) under normal circumstances. When the voltage rises above the normal range, the diodes become forward-biased (conducting). For example, diodes are used in (stepper motor and H-bridge) motor controller and relay circuits to de-energize coils rapidly without the damaging voltage spikes that would otherwise occur. (Any diode used in such an application is called a flyback diode). Many integrated circuits also incorporate diodes on the connection pins to prevent external voltages from damaging their sensitive transistors. Specialized diodes are used to protect from over-voltages at higher power (see Diode types above).
-Logic gates
Diodes can be combined with other components to construct AND and OR logic gates. This is referred to as diode logic.
-Ionizing radiation detectors
In addition to light, mentioned above, semiconductor diodes are sensitive to more energetic radiation. In electronics, cosmic rays and other sources of ionizing radiation cause noise pulses and single and multiple bit errors. This effect is sometimes exploited by particle detectors to detect radiation. A single particle of radiation, with thousands or millions of electron volts of energy, generates many charge carrier pairs, as its energy is deposited in the semiconductor material. If the depletion layer is large enough to catch the whole shower or to stop a heavy particle, a fairly accurate measurement of the particle’s energy can be made, simply by measuring the charge conducted and without the complexity of a magnetic spectrometer or etc. These semiconductor radiation detectors need efficient and uniform charge collection and low leakage current. They are often cooled by liquid nitrogen. For longer range (about a centimetre) particles they need a very large depletion depth and large area. For short range particles, they need any contact or un-depleted semiconductor on at least one surface to be very thin. The back-bias voltages are near breakdown (around a thousand volts per centimetre). Germanium and silicon are common materials. Some of these detectors sense position as well as energy. They have a finite life, especially when detecting heavy particles, because of radiation damage. Silicon and germanium are quite different in their ability to convert gamma rays to electron showers.
Semiconductor detectors for high energy particles are used in large numbers. Because of energy loss fluctuations, accurate measurement of the energy deposited is of less use
-Temperature measurements
A diode can be used as a temperature measuring device, since the forward voltage drop across the diode depends on temperature, as in a Silicon bandgap temperature sensor. From the Shockley ideal diode equation given above, it appears the voltage has a positive temperature coefficient (at a constant current) but depends on doping concentration and operating temperature (Sze 2007). The temperature coefficient can be negative as in typical thermistors or positive for temperature sense diodes down to about 20 kelvins. Typically, silicon diodes have approximately −2 mV/˚C temperature coefficient at room temperature.
-Current steering
Diodes will prevent currents in unintended directions. To supply power to an electrical circuit during a power failure, the circuit can draw current from a battery. An Uninterruptible power supply may use diodes in this way to ensure that current is only drawn from the battery when necessary. Similarly, small boats typically have two circuits each with their own battery/batteries: one used for engine starting; one used for domestics. Normally both are charged from a single alternator, and a heavy duty split charge diode is used to prevent the higher charge battery (typically the engine battery) from discharging through the lower charged battery when the alternator is not running.
Diodes are also used in electronic musical keyboards. To reduce the amount of wiring needed in electronic musical keyboards, these instruments often use keyboard matrix circuits. The keyboard controller scans the rows and columns to determine which note the player has pressed. The problem with matrix circuits is that when several notes are pressed at once, the current can flow backwards through the circuit and trigger "phantom keys" that cause “ghost” notes to play. To avoid triggering unwanted notes, most keyboard matrix circuits have diodes soldered with the switch under each key of the musical keyboard. The same principle is also used for the switch matrix in solid state pinball machines
Sunday, April 17, 2011
zener diode.
A Zener diode is a type of diode that permits current not only in the forward direction like a normal diode, but also in the reverse direction if the voltage is larger than the breakdown voltage known as "Zener knee voltage" or "Zener voltage". The device was named after Clarence Zener, who discovered this electrical property.
A conventional solid-state diode will not allow significant current if it is reverse-biased below its reverse breakdown voltage. When the reverse bias breakdown voltage is exceeded, a conventional diode is subject to high current due to avalanche breakdown. Unless this current is limited by circuitry, the diode will be permanently damaged due to overheating. In case of large forward bias (current in the direction of the arrow), the diode exhibits a voltage drop due to its junction built-in voltage and internal resistance. The amount of the voltage drop depends on the semiconductor material and the doping concentrations.
A Zener diode exhibits almost the same properties, except the device is specially designed so as to have a greatly reduced breakdown voltage, the so-called Zener voltage. By contrast with the conventional device, a reverse-biased Zener diode will exhibit a controlled breakdown and allow the current to keep the voltage across the Zener diode close to the Zener breakdown voltage. For example, a diode with a Zener breakdown voltage of 3.2 V will exhibit a voltage drop of very nearly 3.2 V across a wide range of reverse currents. The Zener diode is therefore ideal for applications such as the generation of a reference voltage (e.g. for an amplifier stage), or as a voltage stabilizer for low-current applications.
Another mechanism that produces a similar effect is the avalanche effect as in the avalanche diode. The two types of diode are in fact constructed the same way and both effects are present in diodes of this type. In silicon diodes up to about 5.6 volts, the Zener effect is the predominant effect and shows a marked negative temperature coefficient. Above 5.6 volts, the avalanche effect becomes predominant and exhibits a positive temperature coefficient.[1] In a 5.6 V diode, the two effects occur together and their temperature coefficients neatly cancel each other out, thus the 5.6 V diode is the component of choice in temperature-critical applications. Modern manufacturing techniques have produced devices with voltages lower than 5.6 V with negligible temperature coefficients, but as higher voltage devices are encountered, the temperature coefficient rises dramatically. A 75 V diode has 10 times the coefficient of a 12 V diode.
All such diodes, regardless of breakdown voltage, are usually marketed under the umbrella term of "Zener diode
Zener diodes are widely used as voltage references and as shunt regulators to regulate the voltage across small circuits. When connected in parallel with a variable voltage source so that it is reverse biased, a Zener diode conducts when the voltage reaches the diode's reverse breakdown voltage. From that point on, the relatively low impedance of the diode keeps the voltage across the diode at that value.
Zener diodes are also used in surge protectors to limit transient voltage spikes.
Another notable application of the zener diode is the use of noise caused by its avalanche breakdown in a random number generator that never repeats
Avalanche breakdown - is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents to flow within materials which are otherwise good insulators. It is a type of electron avalanche. The Avalanche process occurs when the carriers in the transition region are accelerated by the electric field to energies sufficient to free electron-hole pairs via collisions with bond electrons.
Explanation
Materials conduct electricity if they contain mobile charge carriers. There are two types of charge carriers in a semiconductor: free electrons and electron holes. A fixed electron in a reverse-biased diode may break free due to its thermal energy, creating an electron-hole pair. If there is a voltage gradient in the semiconductor, the electron will move towards the positive voltage while the hole will "move" towards the negative voltage. Most of the time, the electron and hole will just move to opposite ends of the crystal and stop. Under the right circumstances, however, (ie. when the voltage is high enough) the free electron may move fast enough to knock other electrons free, creating more free-electron-hole pairs (ie. more charge carriers), increasing the current. Fast-"moving" holes may also result in more electron-hole pairs being formed. In a fraction of a nanosecond, the whole crystal begins to conduct.
Avalanche breakdown usually destroys regular diodes, but avalanche diodes are designed to break down this way at low voltages and can survive the reverse current.
The voltage at which the breakdown occurs is called the breakdown voltage. There is a hysteresis effect; once avalanche breakdown has occurred, the material will continue to conduct if the voltage across it drops below the breakdown voltage. This is different from a Zener diode, which will stop conducting once the reverse voltage drops below the breakdown voltage.
A conventional solid-state diode will not allow significant current if it is reverse-biased below its reverse breakdown voltage. When the reverse bias breakdown voltage is exceeded, a conventional diode is subject to high current due to avalanche breakdown. Unless this current is limited by circuitry, the diode will be permanently damaged due to overheating. In case of large forward bias (current in the direction of the arrow), the diode exhibits a voltage drop due to its junction built-in voltage and internal resistance. The amount of the voltage drop depends on the semiconductor material and the doping concentrations.
A Zener diode exhibits almost the same properties, except the device is specially designed so as to have a greatly reduced breakdown voltage, the so-called Zener voltage. By contrast with the conventional device, a reverse-biased Zener diode will exhibit a controlled breakdown and allow the current to keep the voltage across the Zener diode close to the Zener breakdown voltage. For example, a diode with a Zener breakdown voltage of 3.2 V will exhibit a voltage drop of very nearly 3.2 V across a wide range of reverse currents. The Zener diode is therefore ideal for applications such as the generation of a reference voltage (e.g. for an amplifier stage), or as a voltage stabilizer for low-current applications.
Another mechanism that produces a similar effect is the avalanche effect as in the avalanche diode. The two types of diode are in fact constructed the same way and both effects are present in diodes of this type. In silicon diodes up to about 5.6 volts, the Zener effect is the predominant effect and shows a marked negative temperature coefficient. Above 5.6 volts, the avalanche effect becomes predominant and exhibits a positive temperature coefficient.[1] In a 5.6 V diode, the two effects occur together and their temperature coefficients neatly cancel each other out, thus the 5.6 V diode is the component of choice in temperature-critical applications. Modern manufacturing techniques have produced devices with voltages lower than 5.6 V with negligible temperature coefficients, but as higher voltage devices are encountered, the temperature coefficient rises dramatically. A 75 V diode has 10 times the coefficient of a 12 V diode.
All such diodes, regardless of breakdown voltage, are usually marketed under the umbrella term of "Zener diode
Zener diodes are widely used as voltage references and as shunt regulators to regulate the voltage across small circuits. When connected in parallel with a variable voltage source so that it is reverse biased, a Zener diode conducts when the voltage reaches the diode's reverse breakdown voltage. From that point on, the relatively low impedance of the diode keeps the voltage across the diode at that value.
Zener diodes are also used in surge protectors to limit transient voltage spikes.
Another notable application of the zener diode is the use of noise caused by its avalanche breakdown in a random number generator that never repeats
Avalanche breakdown - is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents to flow within materials which are otherwise good insulators. It is a type of electron avalanche. The Avalanche process occurs when the carriers in the transition region are accelerated by the electric field to energies sufficient to free electron-hole pairs via collisions with bond electrons.
Explanation
Materials conduct electricity if they contain mobile charge carriers. There are two types of charge carriers in a semiconductor: free electrons and electron holes. A fixed electron in a reverse-biased diode may break free due to its thermal energy, creating an electron-hole pair. If there is a voltage gradient in the semiconductor, the electron will move towards the positive voltage while the hole will "move" towards the negative voltage. Most of the time, the electron and hole will just move to opposite ends of the crystal and stop. Under the right circumstances, however, (ie. when the voltage is high enough) the free electron may move fast enough to knock other electrons free, creating more free-electron-hole pairs (ie. more charge carriers), increasing the current. Fast-"moving" holes may also result in more electron-hole pairs being formed. In a fraction of a nanosecond, the whole crystal begins to conduct.
Avalanche breakdown usually destroys regular diodes, but avalanche diodes are designed to break down this way at low voltages and can survive the reverse current.
The voltage at which the breakdown occurs is called the breakdown voltage. There is a hysteresis effect; once avalanche breakdown has occurred, the material will continue to conduct if the voltage across it drops below the breakdown voltage. This is different from a Zener diode, which will stop conducting once the reverse voltage drops below the breakdown voltage.
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